Paper Titles
Interaction of Phosphorus with Dislocation Cores in Silicon
p.265
Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities
p.271
Iron- and Chromium-Indium Pairs in Silicon
p.281
Ab Initio Calculations on Interstitial O Clusters in Si
p.287
Diffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical Results
p.293
Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si
p.299
On the Interplay between Vacancies and Interstitial Clusters in CZ-Grown Silicon
p.307
The p3/2' Fano and Piezo-Fano Spectra of Singly Ionised Zinc Impurity in Germanium
p.313
Spectroscopy of Transitions to Coulomb-Related Landau States in Germanium
p.323

Diffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical Results

Article Preview

Abstract:

You might also be interested in these eBooks
Shallow Impurities in Semiconductors IV View Preview

Info:

Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

293-298

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.293

Citation:

Cite this paper

Online since:

January 1991

Authors:

K.K. Larsen, Arne Nylandsted Larsen

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1991 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.