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Ab Initio Calculations on Interstitial O Clusters in Si
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Diffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical Results
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Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si
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On the Interplay between Vacancies and Interstitial Clusters in CZ-Grown Silicon
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The p3/2' Fano and Piezo-Fano Spectra of Singly Ionised Zinc Impurity in Germanium
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Spectroscopy of Transitions to Coulomb-Related Landau States in Germanium
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Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

299-306

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.299

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Online since:

January 1991

Authors:

Z.G. Gogua

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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