Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si

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Periodical:

Materials Science Forum (Volumes 65-66)

Edited by:

Gordon Davies

Pages:

299-306

DOI:

10.4028/www.scientific.net/MSF.65-66.299

Citation:

Z.G. Gogua "Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si", Materials Science Forum, Vols. 65-66, pp. 299-306, 1991

Online since:

January 1991

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