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The Influence of Metallic Contamination on the Lattice Relaxation of Ge_xSi_1-x Epitaxial Alloys
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Impurity Photoconductivity in Ge_xSi_1-x Epitaxial Layers Doped with Phosphorus
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A FIR Photo-Hall Study of the 1s-2p_-1 Shallow Donor Transition in n-GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 65-66The Influence of Metallic Contamination on the...

The Influence of Metallic Contamination on the Lattice Relaxation of Ge_xSi_1-x Epitaxial Alloys

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Shallow Impurities in Semiconductors IV

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

351-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.351

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Online since:

January 1991

Authors:

V. Higgs, Gordon Davies, R. Kubiak

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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