Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus

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Periodical:

Materials Science Forum (Volumes 65-66)

Edited by:

Gordon Davies

Pages:

357-362

DOI:

10.4028/www.scientific.net/MSF.65-66.357

Citation:

P.E. Dyshlovenko et al., "Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus", Materials Science Forum, Vols. 65-66, pp. 357-362, 1991

Online since:

January 1991

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