Paper Titles
The Influence of Metallic Contamination on the Lattice Relaxation of GexSi1-x Epitaxial Alloys
p.351
Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus
p.357
A FIR Photo-Hall Study of the 1s-2p-1 Shallow Donor Transition in n-GaAs
p.363
Electronic Structure of Be-Doped GaAs
p.369
High Resolution Magneto-Optical Studies of the Donors in MOCVD InP
p.375
Far Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAs
p.381
The Shallow Doping Properties of Mercury Cadmium Telluride as Grown by Molecular Beam Epitaxy
p.389
Electron Paramagnetic Resonance of the Shallow Si Donor in Indirect GaAs/AlxGa1-xAs Heterostructures
p.397
Electron Beam Doping of Zn into GaAs in an Array of GaAs/Zn/GaAs
p.403

High Resolution Magneto-Optical Studies of the Donors in MOCVD InP

Article Preview

Abstract:

You might also be interested in these eBooks
Shallow Impurities in Semiconductors IV View Preview

Info:

Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

375-380

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.375

Citation:

Cite this paper

Online since:

January 1991

Authors:

P.D. Wang, S.N. Holmes, R.A. Stradling

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1991 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.