Paper Titles

Control of Shallow Boron Profile in Silicon
p.35

Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio
p.41

Electron-Hole Mechanism of Migration and Defect Interaction
p.47

Delta-Doping in III-V Semiconductors
p.53

Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples
p.67

Photoluminescence and Excitation Study of Delta Doped GaAs
p.73

Shallow Impurity Bands in δ-Doped Quantum Wells
p.79

Quantum Transport Studies of Atomic Plane (Spike) Doping in InSb and InAs
p.83

Bound Excitons in Quantum Wells
p.91

HomeMaterials Science ForumMaterials Science Forum Vols. 65-66Optical Interband Transitions in Single and...

Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples

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Shallow Impurities in Semiconductors IV

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Materials Science Forum (Volumes 65-66)

Pages:

67-72

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.67

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Online since:

January 1991

Authors:

A.A. Bernussi, J.A. Brum, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipólito

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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