Properties of ZnO/Diamond Film Heterojunction

Abstract:

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High quality boron-doped p-type freestanding diamond (FSD) films with smooth nucleation surface were prepared by hot filament chemical vapor deposition (HFCVD) method. The effects of B/C ratios on the electrical properties of FSD films were investigated by Hall effect measurement system. N-type Al-doped ZnO films were prepared on p-type FSD films by radio-frequency (RF) magnetron sputtering method to fabricate heterojunction. The I-V characteristic of the heterojunction was examined. The results showed a rectifying behavior of this structure.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

1209-1212

DOI:

10.4028/www.scientific.net/MSF.663-665.1209

Citation:

F. Y. Xia et al., "Properties of ZnO/Diamond Film Heterojunction", Materials Science Forum, Vols. 663-665, pp. 1209-1212, 2011

Online since:

November 2010

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$35.00

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DOI: 10.1016/0925-9635(93)90005-m

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