Growth of Undoped GaAs Single Crystal by Pulling-Down Method

Jin, Min; Xu, Jia Yue; He, Qing Bo; Fang, Yong Zheng; Shen, Hui; Wang, Zhan Yong; Jiang, Guo Jian

doi:10.4028/www.scientific.net/MSF.663-665.1213

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Home Materials Science Forum Optoelectronic MaterialsGrowth of Undoped GaAs Single Crystal by...

Growth of Undoped GaAs Single Crystal by Pulling-Down Method

Abstract:

Undoped GaAs single crystal has been grown in PBN crucibles by the pulling-down method. The temperature profile of the furnace was optimized with a narrow melting zone and a small temperature gradient at the solid-liquid interface. Quartz ampoules were used to protect the evaporation of As during the growth and the deformation of the ampoule was discussed as a function of temperature, time and pressure differential. A Ø56 mm×70 mm GaAs crystal with nearly 100 % single crystalline yield was obtained. X-ray rocking curve analysis revealed the excellent crystalline quality. The average EPD and electrical properties of the crystal were tested comparable to those of the crystal produced by the VGF method. Therefore, the pulling down method was a feasible approach for GaAs crystal production.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Main Theme:

Optoelectronic Materials

Edited by:

Yuan Ming Huang

Pages:

1213-1216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.1213

Citation:

M. Jin et al., "Growth of Undoped GaAs Single Crystal by Pulling-Down Method", Materials Science Forum, Vols. 663-665, pp. 1213-1216, 2011

Online since:

November 2010

Authors:

Min Jin, Jia Yue Xu, Qing Bo He, Yong Zheng Fang, Hui Shen, Zhan Yong Wang, Guo Jian Jiang

Keywords:

Crystal Growth, Pulling Down Method, Undoped GaAs

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References

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Paper TitlePages

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945

Study on TlBr Single Crystal Growth Using Improved Electro Dynamic Gradient Method

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1979

Numerical Simulations and Experimental Investigations on Lead Iodide Single Crystals Growth

Authors: Jing Liu, Yu Zhang

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