Growth of Undoped GaAs Single Crystal by Pulling-Down Method


Article Preview

Undoped GaAs single crystal has been grown in PBN crucibles by the pulling-down method. The temperature profile of the furnace was optimized with a narrow melting zone and a small temperature gradient at the solid-liquid interface. Quartz ampoules were used to protect the evaporation of As during the growth and the deformation of the ampoule was discussed as a function of temperature, time and pressure differential. A Ø56 mm×70 mm GaAs crystal with nearly 100 % single crystalline yield was obtained. X-ray rocking curve analysis revealed the excellent crystalline quality. The average EPD and electrical properties of the crystal were tested comparable to those of the crystal produced by the VGF method. Therefore, the pulling down method was a feasible approach for GaAs crystal production.



Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang




M. Jin et al., "Growth of Undoped GaAs Single Crystal by Pulling-Down Method", Materials Science Forum, Vols. 663-665, pp. 1213-1216, 2011

Online since:

November 2010




[1] P. Rudolph and M. Jurisch: J. Crystal Growth. Vol. 198/199 (1999), p.325.

[2] S. Eichler, W. Fliegel, M. Jurisch et al.: J. Crystal Growth Vol. 310 (2008), p.1410.

[3] T. Ishihara, K. Murata, M. Sato, et al.: J. Crystal Growth Vol. 137 (1994), p.375.

[4] X. Liu: Microelectronics Journal. Vol. 27 (1996), p.4.

[5] B. Birkmann, M. Rasp and J. Stenzenberger: J. Crystal Growth Vol. 211 (2000), p.157.

[6] J.Y. Xu, S.J. Fan, B.L. Lu: J. Crystal Growth Vol. 264 (2004), p.260.

[7] J.Y. Xu, et al.: J. Synthetic Crystals Vol. 36 (2007), p.957.

[8] J.Y. Xu, et al.: J. Crystal Growth, Vol. 280 (2005), p.107.

[9] J.Y. Xu, R.Y. Sun, S.J. Fan and G.Y. Zhang: SPIE, Vol. 2897 (1996), p.263.

[10] H.J. Scheel, T. Fukud: Crystal Growth Technology (Wiley Publication, England 2003).

[11] D.H. Matthiesen: J. Crystal Growth Vol. 137 (1994), p.255.

[12] J. Amon, F. Dumke, G. Muller: J. Crystal Growth. Vol. 187 (1998), p.1.

[13] A.Y. Polyakov, A.V. Markov, et al.: Solid State Electronics Vol. 48 (2004), p.155.