A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

Abstract:

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This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

650-653

DOI:

10.4028/www.scientific.net/MSF.663-665.650

Citation:

J. M. Byun et al., "A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method", Materials Science Forum, Vols. 663-665, pp. 650-653, 2011

Online since:

November 2010

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Price:

$35.00

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