Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals
Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown by Vertical Bridgman technique have been experimentally measured at temperatures 310 K to 360 K. Two crystals are undoped and semi insulating and one crystal is conductive which is doped with Si and B(Silicon ≈ 4x1015 cm-3 and Boron ≈ 8x 1015cm-3). It has been experimentally observed that doping of silicon and boron gives rise to an increase in thermal conductivity.
M. Prema Rani and R. Saravanan, "Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals", Materials Science Forum, Vol. 671, pp. 153-163, 2011