Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals

Abstract:

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Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown by Vertical Bridgman technique have been experimentally measured at temperatures 310 K to 360 K. Two crystals are undoped and semi insulating and one crystal is conductive which is doped with Si and B(Silicon ≈ 4x1015 cm-3 and Boron ≈ 8x 1015cm-3). It has been experimentally observed that doping of silicon and boron gives rise to an increase in thermal conductivity.

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Periodical:

Edited by:

R. Saravanan

Pages:

153-163

DOI:

10.4028/www.scientific.net/MSF.671.153

Citation:

M. Prema Rani and R. Saravanan, "Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals", Materials Science Forum, Vol. 671, pp. 153-163, 2011

Online since:

January 2011

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$35.00

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