First-Principles Study of Adsorption Properties of NO2 on Boron-Doped Silicon Carbide Nanotube

Abstract:

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To explore a novel sensor to detect the presence of nitrogen dioxide (NO2), we investigate reactivity of boron-doped (B-doped) single-walled (8,0) silicon carbide nanotube (SiCNT) with NO2. Based on density functional theory, the structure and electronic properties of the B-doped SiCNT with and without the adsorption of NO2 molecule have been calculated. Results show that a stable adsorption between the nanotube and the gas molecule is formed and the conductivity of the SiCNT is improved obviously. B-doped SiCNT is expected to be a potential candidate for detecting the presence of NO2.

Info:

Periodical:

Materials Science Forum (Volumes 675-677)

Edited by:

Yi Tan and Dongying Ju

Pages:

1015-1018

DOI:

10.4028/www.scientific.net/MSF.675-677.1015

Citation:

R. X. Ding et al., "First-Principles Study of Adsorption Properties of NO2 on Boron-Doped Silicon Carbide Nanotube", Materials Science Forum, Vols. 675-677, pp. 1015-1018, 2011

Online since:

February 2011

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Price:

$35.00

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