Phase Equilibria of Boron in Metallurgical Grade Silicon at 1300°C

Abstract:

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The diffusion layer and melt of silicon-boron are respectively obtained after quenched in water at 1300 oC by using metallurgical grade silicon (MG-Si) powder and amorphous boron powder. The phase equilibria for boron in MG-Si have been investigated by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS). The back scattered electron (BSE) image of diffusion layer displays the intermediate phase SiB4 in silicon-boron phase band, and the XRD results also indicate that SiB4 exists in silicon-boron diffusion layer at 1300 oC. It is inferred that the intermediate phase SiB4 is formed by the reaction (Si) + SiB6 ↔ SiB4 according to the equilibrium composition of Si/B=4/1 as quantified by Energy Dispersive Spectroscopy.

Info:

Periodical:

Materials Science Forum (Volumes 675-677)

Edited by:

Yi Tan and Dongying Ju

Pages:

85-88

DOI:

10.4028/www.scientific.net/MSF.675-677.85

Citation:

J. J. Wu et al., "Phase Equilibria of Boron in Metallurgical Grade Silicon at 1300°C", Materials Science Forum, Vols. 675-677, pp. 85-88, 2011

Online since:

February 2011

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Price:

$35.00

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