Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Abstract:

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Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ~ 17% for both intentionally and unintentionally doped films, while those with screw dislocations and multiple stepped surfaces were ~ 22%. The electronic and structural properties of the mesas were found on a micrometer-sized length scale using µ-PL and µ-Raman, respectively. 3C-SiC mesas were found to have complete 3C-SiC coverage with some of the mesas having electronic defects, while other mesas were found to be defect-free.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

119-122

DOI:

10.4028/www.scientific.net/MSF.679-680.119

Citation:

R. L. Myers-Ward et al., "Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas", Materials Science Forum, Vols. 679-680, pp. 119-122, 2011

Online since:

March 2011

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$35.00

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