Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures

Abstract:

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Raman microscopy has been used to study the stress distribution on 3C-SiC/Si(100) micro-machined free standing structures. Linear scans along different structures reveal similar trends of the TO mode Raman Shift. We have found that, independently of the microstructure considered, the Raman frequency decreases close to the undercut. We compare our experimental measurements with FEM simulations finding that, close to the undercut, the stress tensor becomes non-diagonal, modifying the Raman shift to stress relation.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

141-144

DOI:

10.4028/www.scientific.net/MSF.679-680.141

Citation:

N. Piluso et al., "Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures", Materials Science Forum, Vols. 679-680, pp. 141-144, 2011

Online since:

March 2011

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Price:

$35.00

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