Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy

Abstract:

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Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC films grown on (111) and (100) Si oriented substrates. Local stacking variations observed on the (111) 3C-SiC surface lead to a worse crystal morphology compared to (100) 3C-SiC films resulting in a decrease of the average bulk mobility.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

221-224

DOI:

10.4028/www.scientific.net/MSF.679-680.221

Citation:

N. Piluso et al., "Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy", Materials Science Forum, Vols. 679-680, pp. 221-224, 2011

Online since:

March 2011

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Price:

$35.00

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