Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC films grown on (111) and (100) Si oriented substrates. Local stacking variations observed on the (111) 3C-SiC surface lead to a worse crystal morphology compared to (100) 3C-SiC films resulting in a decrease of the average bulk mobility.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
N. Piluso et al., "Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy", Materials Science Forum, Vols. 679-680, pp. 221-224, 2011