Defects in SiC: Theory

Abstract:

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A brief overview about the recent progress in developing the methods to calculate the properties of defects in solids is given and some recent examples on vacancy-related defects in SiC are presented.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

225-232

DOI:

10.4028/www.scientific.net/MSF.679-680.225

Citation:

A. Gali "Defects in SiC: Theory", Materials Science Forum, Vols. 679-680, pp. 225-232, 2011

Online since:

March 2011

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Price:

$35.00

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