Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching

Abstract:

Article Preview

Dislocations in highly doped n-type 4H-SiC (n+-SiC, n>1019 cm-3) substrate have been studied by means of electron beam induced current (EBIC). Ni/n-SiC/n+-SiC/Al structure was fabricated in order to simultaneously observe the dislocations in n-SiC epilayer and n+-SiC substrate. We have found that dark dots in the EBIC image correspond to threading screw dislocations (TSDs) and threading edge dislocations (TEDs) with the former being relatively darker. Short dark lines along off-cut are attributed to basal plane dislocations (BPDs) in the epilayer; and the randomly oriented long dark lines are caused by the BPDs in the substrate. The classification of the dislocations by EBIC has been examined by wet etching in KOH+Na2O2.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

294-297

DOI:

10.4028/www.scientific.net/MSF.679-680.294

Citation:

Y. Z. Yao et al., "Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching", Materials Science Forum, Vols. 679-680, pp. 294-297, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.