Enlargement Growth of Large 4H-SiC Bulk Single Crystal

Abstract:

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In this study, we suggest the effective enlargement method of (0001) 4H-SiC bulk crystals grown by the sublimation method using long length growth technique (LLG). This method could achieve low thermal strain and rapid enlargement growth comparing with conventional c-axis growth technique. We also demonstrated high quality enlargement growth from 2inch to  4inch of (0001) 4H-SiC by LLG.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

3-7

DOI:

10.4028/www.scientific.net/MSF.679-680.3

Citation:

T. Kato et al., "Enlargement Growth of Large 4H-SiC Bulk Single Crystal", Materials Science Forum, Vols. 679-680, pp. 3-7, 2011

Online since:

March 2011

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Price:

$35.00

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