The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface


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The effect of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface on the capacitance of the MOS capacitors is investigated. The Thermal Dielectric Relaxation Current (TDRC) technique and Capacitance-Voltage (C-V) measurements performed at different temperatures and probe frequencies on an N implanted sample and on a virgin sample were employed for this purpose. There are three types of defects located at or near the interface, Dit, NIToxfast and NIToxslow that can be distinguished. Only Dit and NIToxfast respond to the a.c. small, high frequency signal at temperatures above 150K. The separation of Dit from the NIToxfast states have enabled us to study the influence of the excess of interfacial Nitrogen on each of the mentioned defects. It has been found that the N-implantation process fully suppresses the formation of NIToxfast and partially NIToxslow and Dit. Theoretical C-V characteristics were computed, based on the defect distributions determined by TDRC, and compared with the experimental ones showing a close agreement.



Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson




I. Pintilie et al., "The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface", Materials Science Forum, Vols. 679-680, pp. 326-329, 2011

Online since:

March 2011




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