Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method
We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
K. Kusunoki et al., "Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method", Materials Science Forum, Vols. 679-680, pp. 36-39, 2011