Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC

Abstract:

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A two-dimensional model of aluminum-ion implantation into 4H-SiC at moderate doses (1011 to 1013 cm-2) has been developed. The model is based on a Monte-Carlo simulation using a binary-collision approximation. This simulation reveals that iso-concentration contours are independent of the orientation of the masking edge. Lateral range straggling is extracted by expressing the lateral-concentration profiles as a one-dimensional dual-Pearson-distribution function multiplied by a Gauss-distribution function. Compared to vertical straggling, the lateral straggling is found to be more weakly dependent on projected range.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

405-408

DOI:

10.4028/www.scientific.net/MSF.679-680.405

Citation:

K. Mochizuki and N. Yokoyama, "Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 405-408, 2011

Online since:

March 2011

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$35.00

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