Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC
A two-dimensional model of aluminum-ion implantation into 4H-SiC at moderate doses (1011 to 1013 cm-2) has been developed. The model is based on a Monte-Carlo simulation using a binary-collision approximation. This simulation reveals that iso-concentration contours are independent of the orientation of the masking edge. Lateral range straggling is extracted by expressing the lateral-concentration profiles as a one-dimensional dual-Pearson-distribution function multiplied by a Gauss-distribution function. Compared to vertical straggling, the lateral straggling is found to be more weakly dependent on projected range.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
K. Mochizuki and N. Yokoyama, "Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 405-408, 2011