Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC

Abstract:

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This paper reports on the impact of the surface morphology on the properties of Ti/Al Ohmic contacts fabricated on Al-implanted 4H-SiC. In particular, the surface roughness of the Al-implanted regions after annealing at 1700 °C was strongly reduced by the using a protective carbon capping layer during annealing (the surface roughness decreased from 9.0 nm to 1.3 nm). In this way, also the morphology and the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions could be improved. The electrical and morphological data were correlated with the structural properties of the reacted metal layer and of the metal/SiC interfacial region.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

413-416

DOI:

10.4028/www.scientific.net/MSF.679-680.413

Citation:

A. Frazzetto et al., "Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 413-416, 2011

Online since:

March 2011

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$35.00

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