2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

Abstract:

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In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary collision approximation (MC–BCA). Results indicate that a small fraction of ions, implanted normal to a (0001) 4H-SiC wafer (8° off-axis towards the {11-20}), is scattered and become channeled in the <1120> directions perpendicular to the <0001> axis. Due to this phenomenon, doped regions with concentration ≤ 10− 4 of the peak value, may extend laterally for a few µm below the edge of a SiO2 mask.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

421-424

DOI:

10.4028/www.scientific.net/MSF.679-680.421

Citation:

G. Lulli and R. Nipoti, "2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions", Materials Science Forum, Vols. 679-680, pp. 421-424, 2011

Online since:

March 2011

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$35.00

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