Graded Etched Junction Termination for SiC Thyristors
In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 µm. On another sample with a thinner drift layer, similar thyristors have been realized with a low resistive contact, resulting in an on-state voltage drop of 3.2 V at 40 A/cm².
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
G. Pâques et al., "Graded Etched Junction Termination for SiC Thyristors", Materials Science Forum, Vols. 679-680, pp. 457-460, 2011