Graded Etched Junction Termination for SiC Thyristors

Abstract:

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In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 µm. On another sample with a thinner drift layer, similar thyristors have been realized with a low resistive contact, resulting in an on-state voltage drop of 3.2 V at 40 A/cm².

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

457-460

DOI:

10.4028/www.scientific.net/MSF.679-680.457

Citation:

G. Pâques et al., "Graded Etched Junction Termination for SiC Thyristors", Materials Science Forum, Vols. 679-680, pp. 457-460, 2011

Online since:

March 2011

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Price:

$35.00

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