Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC
Anodic oxidation was performed to 4H-SiC in order to suppress the negative impacts on the Schottky diode characteristics. The electrochemical deposition of ZnO before and after the oxidation revealed a reduction in the number of areas with low Schottky barrier height. Before and after the oxidation, current-voltage characteristics of Ni Schottky contacts was compared, and it was found out that the characteristics were improved after the oxidation. These results suggest that the anodic oxidation is a promising technique to suppress the negative influence of the crystal defects.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
M. Kimura et al., "Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 461-464, 2011