Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC

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Anodic oxidation was performed to 4H-SiC in order to suppress the negative impacts on the Schottky diode characteristics. The electrochemical deposition of ZnO before and after the oxidation revealed a reduction in the number of areas with low Schottky barrier height. Before and after the oxidation, current-voltage characteristics of Ni Schottky contacts was compared, and it was found out that the characteristics were improved after the oxidation. These results suggest that the anodic oxidation is a promising technique to suppress the negative influence of the crystal defects.

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Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

461-464

Citation:

M. Kimura et al., "Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 461-464, 2011

Online since:

March 2011

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$38.00

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