Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC


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Anodic oxidation was performed to 4H-SiC in order to suppress the negative impacts on the Schottky diode characteristics. The electrochemical deposition of ZnO before and after the oxidation revealed a reduction in the number of areas with low Schottky barrier height. Before and after the oxidation, current-voltage characteristics of Ni Schottky contacts was compared, and it was found out that the characteristics were improved after the oxidation. These results suggest that the anodic oxidation is a promising technique to suppress the negative influence of the crystal defects.



Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson




M. Kimura et al., "Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 461-464, 2011

Online since:

March 2011




[1] H. Fujiwara, T. Kimoto, T. Tojo and H. Matsunami. Appl. Phys. Lett. Vol. 87 (2005), p.051912.

[2] B. J. Skromme, E. Luckowski, K. Moore, M. Bhatnagar, C. E. Weitzel, T. Gehoski and D. Ganser, J. Electron. Mat. Vol. 29 (2000) p.376.

[3] S. Tumakha, D.J. Ewing, L.M. Porter, Q. Wahab, X. Ma, T. S. Sudharshan, and L.J. Brillson, Appl. Phys. Lett. Vol. 87 (2005) p.242106.


[4] C. Temircl, B. Bati, M. Sa lam and A. Türüt, Applied Surface Science Vol. 172 (2001) p.1.

[5] M. Kato, M. Ichimura and E. Arai, Jpn. J. Appl. Phys. Vol. 40 (2001) p. L1145.

[6] M. Kato, K. Ogawa and M. Ichimura, Jpn. J. Appl. Phys. Vol. 46 (2007), p. L997.