Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing
In this paper we demonstrate the recovery of Ohmic contacts formed on C-face 4H-SiC following high temperature post-processing. After a typical high-κ dielectric anneal in O2 for 3 minutes at 650 °C, replacing the metallization stack is revealed to significantly reduce the damage produced in the I-V characteristics. Using C-AFM we have also studied the mechanisms responsible for Ohmic contact formation, presenting a possible relationship between changes in the SiC crystal orientation and the establishment of Ohmic behaviour.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
B. J.D. Furnival et al., "Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing", Materials Science Forum, Vols. 679-680, pp. 469-472, 2011