Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing

Abstract:

Article Preview

In this paper we demonstrate the recovery of Ohmic contacts formed on C-face 4H-SiC following high temperature post-processing. After a typical high-κ dielectric anneal in O2 for 3 minutes at 650 °C, replacing the metallization stack is revealed to significantly reduce the damage produced in the I-V characteristics. Using C-AFM we have also studied the mechanisms responsible for Ohmic contact formation, presenting a possible relationship between changes in the SiC crystal orientation and the establishment of Ohmic behaviour.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

469-472

DOI:

10.4028/www.scientific.net/MSF.679-680.469

Citation:

B. J.D. Furnival et al., "Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing", Materials Science Forum, Vols. 679-680, pp. 469-472, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.