Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Abstract:

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With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN diodes were designed and fabricated. The expected effect of the mesa height on the reverse behaviour could be investigated as well as the condition of the material surface. It was shown that these simple devices are well suited as test devices.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

473-476

DOI:

10.4028/www.scientific.net/MSF.679-680.473

Citation:

G. Pâques et al., "Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height", Materials Science Forum, Vols. 679-680, pp. 473-476, 2011

Online since:

March 2011

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Price:

$35.00

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