Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height
With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN diodes were designed and fabricated. The expected effect of the mesa height on the reverse behaviour could be investigated as well as the condition of the material surface. It was shown that these simple devices are well suited as test devices.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
G. Pâques et al., "Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height", Materials Science Forum, Vols. 679-680, pp. 473-476, 2011