Thinning of 2-Inch SiC Wafer by Plasma Chemical Vaporization Machining Using Cylindrical Rotary Electrode

Abstract:

Article Preview

To reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin a SiC wafer with a high removal rate by conventional mechanical machining because its high hardness and brittleness cause cracking and chipping during thinning. In this study, we attempted to thin a 2-inch 4H-SiC wafer by plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. By controlling the scanning speed of the table and optimizing the oxygen percentage in the CF4+O2+He mixture gas, a maximum removal rate of 0.56 μm/min was obtained over the entire wafer. Furthermore, the surface roughness was improved after thinning. Therefore, PCVM can be used as an effective method for thinning SiC wafers.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

481-484

DOI:

10.4028/www.scientific.net/MSF.679-680.481

Citation:

Y. Sano et al., "Thinning of 2-Inch SiC Wafer by Plasma Chemical Vaporization Machining Using Cylindrical Rotary Electrode", Materials Science Forum, Vols. 679-680, pp. 481-484, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.