Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching
Catalyst-referred etching (CARE) is an abrasive-free planarization method. We used 3-inch and 2-inch 4H-SiC (0001) 4° off-axis substrates to investigate the processing characteristics that are affected by the substrate diameter. The surface roughness of the 3-inch substrate was extremely smooth over the whole substrate. The surface roughness and removal rate of the 3-inch substrate were approximately the same as those of the 2-inch substrate.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
T. Okamoto et al., "Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching", Materials Science Forum, Vols. 679-680, pp. 493-495, 2011