Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching

Abstract:

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Catalyst-referred etching (CARE) is an abrasive-free planarization method. We used 3-inch and 2-inch 4H-SiC (0001) 4° off-axis substrates to investigate the processing characteristics that are affected by the substrate diameter. The surface roughness of the 3-inch substrate was extremely smooth over the whole substrate. The surface roughness and removal rate of the 3-inch substrate were approximately the same as those of the 2-inch substrate.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

493-495

DOI:

10.4028/www.scientific.net/MSF.679-680.493

Citation:

T. Okamoto et al., "Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching", Materials Science Forum, Vols. 679-680, pp. 493-495, 2011

Online since:

March 2011

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Price:

$35.00

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