Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC

Abstract:

Article Preview

In this study a pyrolyzed photoresist film that has been used for protecting the implanted surface of a 4H-SiC wafer during post implantation annealing at 1800-1950 °C has preserved on the wafer surface and used for the fabrication of ohmic contact pads on P+ implanted areas. The carbon film has been patterned by using a RIE O2-based plasma. A specific contact resistance of 9  10 5 cm2 has been obtained on P+ 1  1020 cm 3 implanted 4H-SiC. Micro-Raman characterizations show that the carbon cap is formed of a nano-crystalline graphitic phase.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

504-507

DOI:

10.4028/www.scientific.net/MSF.679-680.504

Citation:

R. Nipoti et al., "Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 504-507, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.