Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
In this study a pyrolyzed photoresist film that has been used for protecting the implanted surface of a 4H-SiC wafer during post implantation annealing at 1800-1950 °C has preserved on the wafer surface and used for the fabrication of ohmic contact pads on P+ implanted areas. The carbon film has been patterned by using a RIE O2-based plasma. A specific contact resistance of 9 10 5 cm2 has been obtained on P+ 1 1020 cm 3 implanted 4H-SiC. Micro-Raman characterizations show that the carbon cap is formed of a nano-crystalline graphitic phase.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
R. Nipoti et al., "Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 504-507, 2011