β-SiC NWs Grown on Patterned and MEMS Silicon Substrates

Abstract:

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Cubic silicon carbide nanowires (-SiC or 3C-SiC NW) have been grown by Vapour Phase Epitaxy on (001) silicon substrates patterned by conventional photolithography and on Micro Electro Mechanical Systems (MEMS, e.g. cantilevers, springs, bridges) fabricated on (001) Silicon On Insulator (SOI) wafers. The NW morphology was investigated by scanning electron microscopy, showing that the nanowires grew selectively where a nickel thin layer was previously deposited, thanks to its catalytic action. High resolution transmission electron microscopy studies showed that the NWs are predominantly 3C polytype with <111> growth axis and stacking defects on (111) planes.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

508-511

DOI:

10.4028/www.scientific.net/MSF.679-680.508

Citation:

B. E. Watts et al., "β-SiC NWs Grown on Patterned and MEMS Silicon Substrates", Materials Science Forum, Vols. 679-680, pp. 508-511, 2011

Online since:

March 2011

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Price:

$35.00

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