Growth of SiC Microwires through Si Microwires Carburization

Abstract:

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Silicon microwires (MWs) previously synthesized using the VLS method with gold catalyst are being carburized at 1100°C under methane aiming to their conversion to SiC. SEM, TEM as well as XPS and Raman spectroscopy were used for structural and morphological characterization. After carburization achievement, SiC is found to be polycrystalline with a high density of stacking faults associated to an increase of surface roughness. Directions for the carburization process optimization are given.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

512-515

DOI:

10.4028/www.scientific.net/MSF.679-680.512

Citation:

M. Ollivier et al., "Growth of SiC Microwires through Si Microwires Carburization", Materials Science Forum, Vols. 679-680, pp. 512-515, 2011

Online since:

March 2011

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Price:

$35.00

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