Influence of Oxygen on the Absorption of Silicon Carbide Nanoparticles

Abstract:

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We have investigated the absorption of 0.9, 1.4 nm silicon carbide nanoparticles (SiC NPs) by time-dependent density functional calculations, focusing on the effect of different oxygen adsorbates of the surface. We have found that negatively charged Si-O−, Si-COO− defects dramatically lower the optical gap of SiC NPs. Our findings can help interpret recent controversary experiments on colloidal SiC NPs.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

520-523

DOI:

10.4028/www.scientific.net/MSF.679-680.520

Citation:

M. Vörös et al., "Influence of Oxygen on the Absorption of Silicon Carbide Nanoparticles", Materials Science Forum, Vols. 679-680, pp. 520-523, 2011

Online since:

March 2011

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Price:

$35.00

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