Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions

Abstract:

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Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (~20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

524-527

DOI:

10.4028/www.scientific.net/MSF.679-680.524

Citation:

M. Goto et al., "Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions", Materials Science Forum, Vols. 679-680, pp. 524-527, 2011

Online since:

March 2011

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$35.00

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