Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection
Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
D. M. Nguyen et al., "Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection", Materials Science Forum, Vols. 679-680, pp. 567-570, 2011