Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Abstract:

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Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

567-570

DOI:

10.4028/www.scientific.net/MSF.679-680.567

Citation:

D. M. Nguyen et al., "Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection", Materials Science Forum, Vols. 679-680, pp. 567-570, 2011

Online since:

March 2011

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Price:

$35.00

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