Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics
A numerical simulation study focused on an oxide-free 4H-SiC power device that is based on a normally-off Bipolar Mode Field Effect Transistor (BMFET) structure, and therefore on the principle of conductivity modulation from minority carrier injection, is presented. Starting from a n-/n+ 4H-SiC epi-wafer, with an epitaxial layer thickness of a few microns, and considering the presently available 4H-SiC ion implantation technology, a completely planar SiC-based BMFET has been designed. Such a device has interesting features in terms of static forward and blocking I V characteristics for high power applications. The 4H-SiC fundamental physical models, such as the doping incomplete ionization and the carrier recombination processes, were taken into account during the simulations.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
F. G. Della Corte et al., "Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics", Materials Science Forum, Vols. 679-680, pp. 621-624, 2011