Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics

Abstract:

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A numerical simulation study focused on an oxide-free 4H-SiC power device that is based on a normally-off Bipolar Mode Field Effect Transistor (BMFET) structure, and therefore on the principle of conductivity modulation from minority carrier injection, is presented. Starting from a n-/n+ 4H-SiC epi-wafer, with an epitaxial layer thickness of a few microns, and considering the presently available 4H-SiC ion implantation technology, a completely planar SiC-based BMFET has been designed. Such a device has interesting features in terms of static forward and blocking I V characteristics for high power applications. The 4H-SiC fundamental physical models, such as the doping incomplete ionization and the carrier recombination processes, were taken into account during the simulations.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

621-624

DOI:

10.4028/www.scientific.net/MSF.679-680.621

Citation:

F. G. Della Corte et al., "Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics", Materials Science Forum, Vols. 679-680, pp. 621-624, 2011

Online since:

March 2011

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Price:

$35.00

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