1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Abstract:

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DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are presented. These SiC DMOSFETs remain functional to temperatures in excess of 225°C, with leakage current at 1700V at 225°C of less than 5 A with VGS = 0V. The DMOSFETs show excellent switching characteristics, with total switching energy of 1.8 to 1.95 mJ over the entire temperature range of testing (25°C to 200°C), when switched from the blocking state at 1200V to conducting at 20A in a clamped inductive load switching circuit. The electrical characteristics are compared to commercially available Si IGBTs rated to 1700V with similar current ratings as the SiC DMOSFET described herein.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

633-636

DOI:

10.4028/www.scientific.net/MSF.679-680.633

Citation:

B. A. Hull et al., "1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation", Materials Science Forum, Vols. 679-680, pp. 633-636, 2011

Online since:

March 2011

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Price:

$35.00

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