Paper Title:
4kV Silicon Carbide MOSFETs
  Abstract

Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 17 mΩ-cm2 with a blocking voltage of 3.3kV. Analysis is presented of the on-resistance and temperature dependence (up to 175°C), as well as switching performance. Switching tests taken at 1000V and 6A showed turn-on and turn-off transients of approximately 20-40ns.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
637-640
DOI
10.4028/www.scientific.net/MSF.679-680.637
Citation
Z. Stum, A.V. Bolotnikov, P. A. Losee, K. Matocha, S. Arthur, J. Nasadoski, R. R. Rao, O.S. Saadeh, L. Stevanovic, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, "4kV Silicon Carbide MOSFETs", Materials Science Forum, Vols. 679-680, pp. 637-640, 2011
Online since
March 2011
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Price
$35.00
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