4kV Silicon Carbide MOSFETs
Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 17 mΩ-cm2 with a blocking voltage of 3.3kV. Analysis is presented of the on-resistance and temperature dependence (up to 175°C), as well as switching performance. Switching tests taken at 1000V and 6A showed turn-on and turn-off transients of approximately 20-40ns.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Z. Stum et al., "4kV Silicon Carbide MOSFETs", Materials Science Forum, Vols. 679-680, pp. 637-640, 2011