Characterisation of HfO2/Si/SiC MOS Capacitors

Abstract:

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In this paper, the integration of HfO2 onto SiC has been investigated via a number of different test structures. Capacitors consisting of HfO2 on Si, SiC, Si/SiC and SiO2/SiC have been fabricated and electrically tested. The new HfO2/Si/SiC capacitors provide the greatest breakdown electric field of 3.5 MV/cm, whilst leakage currents are minimised through the insertion of the narrow bandgap material. The Si layer, which is wafer bonded to the SiC, is proven to be stress free through Raman spectroscopy, whilst TEM and EDX prove that the interface is free of contaminants.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

674-677

DOI:

10.4028/www.scientific.net/MSF.679-680.674

Citation:

P. M. Gammon et al., "Characterisation of HfO2/Si/SiC MOS Capacitors", Materials Science Forum, Vols. 679-680, pp. 674-677, 2011

Online since:

March 2011

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Price:

$35.00

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