High Temperature Silicon Carbide CMOS Integrated Circuits
The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits , potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
D. T. Clark et al., "High Temperature Silicon Carbide CMOS Integrated Circuits", Materials Science Forum, Vols. 679-680, pp. 726-729, 2011