High Temperature Silicon Carbide CMOS Integrated Circuits

Abstract:

Article Preview

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

726-729

DOI:

10.4028/www.scientific.net/MSF.679-680.726

Citation:

D. T. Clark et al., "High Temperature Silicon Carbide CMOS Integrated Circuits", Materials Science Forum, Vols. 679-680, pp. 726-729, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.