High Temperature Graphene Formation on Capped and Uncapped SiC

Abstract:

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Epitaxial graphene was grown on Si-face 4H-SiC. A SiC pretreatment with a carbon cap¬ping technique was used as well as slow heating rates and a temperature of 1800 °C under atmos¬pheric argon pressure. The surface morphology was investigated by atomic force microscopy and Raman spectroscopy was performed for samples with different graphitization times.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

785-788

DOI:

10.4028/www.scientific.net/MSF.679-680.785

Citation:

R. Göckeritz et al., "High Temperature Graphene Formation on Capped and Uncapped SiC", Materials Science Forum, Vols. 679-680, pp. 785-788, 2011

Online since:

March 2011

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$38.00

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