High Temperature Graphene Formation on Capped and Uncapped SiC
Epitaxial graphene was grown on Si-face 4H-SiC. A SiC pretreatment with a carbon cap¬ping technique was used as well as slow heating rates and a temperature of 1800 °C under atmos¬pheric argon pressure. The surface morphology was investigated by atomic force microscopy and Raman spectroscopy was performed for samples with different graphitization times.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
R. Göckeritz et al., "High Temperature Graphene Formation on Capped and Uncapped SiC", Materials Science Forum, Vols. 679-680, pp. 785-788, 2011