Observations on C-Face SiC Graphene Growth in Argon

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The growth of epitaxial graphene on C-face 6H-SiC substrates is investigated using pro-cess conditions that can form small, local areas of graphene. The thickness of SiC lost to Si sublimation is not completely countered by the thickness of the resulting graphene and so graphene-covered basins (GCBs) are formed. The GCBs are most likely nucleated at threading dislocations from the substrate. The GCB morphology exhibits ridges, similar to those found on continuous films. The GCBs expand through erosion of the surrounding SiC substrate walls, eventually coalescing into continuous films. The ratio of the Raman D and G peaks was used to estimate the crystallite length scale and it was found to be about 200 nm for small GCBs and > 1 m for continuous films.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

789-792

DOI:

10.4028/www.scientific.net/MSF.679-680.789

Citation:

D. K. Gaskill et al., "Observations on C-Face SiC Graphene Growth in Argon", Materials Science Forum, Vols. 679-680, pp. 789-792, 2011

Online since:

March 2011

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$38.00

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