Influence of Intercalated Silicon on the Transport Properties of Graphene
Epitaxial graphene produced from SiC substrates exhibits a carrier mobility re- duction thought to arise from intercalated silicon. We present the results of density functional simulations and show that individual silicon atoms are highly mobile on and between graphene sheets, suggesting that thermally stable structures involving individual Si impurities are likely to result from the interaction of silicon with defects in the graphene sheets.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
J. P. Goss, P. R. Briddon, V. K. Nagareddy, N. G. Wright, A. B. Horsfall, J. D. Caldwell, D. K. Gaskill, G. G. Jernigan, "Influence of Intercalated Silicon on the Transport Properties of Graphene", Materials Science Forum, Vols. 679-680, pp. 793-796, 2011