Influence of Intercalated Silicon on the Transport Properties of Graphene

Abstract:

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Epitaxial graphene produced from SiC substrates exhibits a carrier mobility re- duction thought to arise from intercalated silicon. We present the results of density functional simulations and show that individual silicon atoms are highly mobile on and between graphene sheets, suggesting that thermally stable structures involving individual Si impurities are likely to result from the interaction of silicon with defects in the graphene sheets.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

793-796

DOI:

10.4028/www.scientific.net/MSF.679-680.793

Citation:

J. P. Goss, P. R. Briddon, V. K. Nagareddy, N. G. Wright, A. B. Horsfall, J. D. Caldwell, D. K. Gaskill, G. G. Jernigan, "Influence of Intercalated Silicon on the Transport Properties of Graphene", Materials Science Forum, Vols. 679-680, pp. 793-796, 2011

Online since:

March 2011

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Price:

$35.00

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