Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)
In this study we examined the structural evolution of graphene grown on 8° off-axis 4H-SiC(0001) substrates at temperatures from 1600°C to 1700°C in Ar ambient. Morphological transformation of SiC substrate after annealing was examined by Tapping Mode Atomic Force Microscopy. Moreover, by etching-out graphene layers from graphitized SiC substrates in selective trenches we determined the number of graphene layers. Numbers of graphene layers were then independently confirmed by Transmission Electron Microscopy imaging.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
S. Sonde et al., "Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)", Materials Science Forum, Vols. 679-680, pp. 797-800, 2011