Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

Abstract:

Article Preview

We investigated a way of reducing the stacking fault (SF) density on a highly nitrogen (N) doped 4H-SiC crystal. SFs were generated at highly N doped crystal exceeding 4 x 1019 cm-3 and the density was increased with increasing N concentration. We found that Al co-doping had the potential to suppress this SF generation and was effective up to an N concentration of about 1 x 1021cm-3. This effect depended strongly on the Al concentration. We discussed the reason for the SF suppression effect of Al co-doping.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

8-11

DOI:

10.4028/www.scientific.net/MSF.679-680.8

Citation:

K. Kojima et al., "Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal", Materials Science Forum, Vols. 679-680, pp. 8-11, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.