Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T

Abstract:

Article Preview

The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

816-819

DOI:

10.4028/www.scientific.net/MSF.679-680.816

Citation:

A. Pérez-Tomás et al., "Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T", Materials Science Forum, Vols. 679-680, pp. 816-819, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.