Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T
The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
A. Pérez-Tomás et al., "Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T", Materials Science Forum, Vols. 679-680, pp. 816-819, 2011