The Application of Simulation and Optimization in the Growth of High-Purity Silicon Thin Film on Low-Purity Silicon Substrate by Liquid Phase Epitaxial

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This paper describe a method in the growth of high-purity Si thin film on low-purity silicon substrate by liquid phase epitaxial (LPE) growth, in order to eliminate the effect of melt substrate on the matrix, we simulate the matrix temperature effect on the epitaxial substrate temperature choice and the growth of thin film thickness with the growth time, then we carried out experiment according to the simulation result. Through the analyses experimental results, we found that on the low-purity silicon substrate can grow very good high-purity silicon thin film by liquid phase epitaxial (LPE) growth and thickness with growth time have little difference between the simulation. So we come to the conclusion: The growth of high-purity Si thin film on low-purity silicon substrate by liquid phase epitaxial (LPE) growth is a good way to make solar cell material; through the numerical simulation, we can effectively reduce the test energy consumption and test repeat times, which provide a good theoretical basis for the experiment successfully conduct.

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Periodical:

Edited by:

Kunyuan Gao, Shaoxiong Zhou, Xinqing Zhao

Pages:

130-133

DOI:

10.4028/www.scientific.net/MSF.685.130

Citation:

Y. C. Gao et al., "The Application of Simulation and Optimization in the Growth of High-Purity Silicon Thin Film on Low-Purity Silicon Substrate by Liquid Phase Epitaxial", Materials Science Forum, Vol. 685, pp. 130-133, 2011

Online since:

June 2011

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$35.00

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