Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields

Abstract:

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We studied the optimization of 300mm CZ silicon crystal growth in 28 inch hot zone with axial magnetic field. The convex of melt-crystal interfaces toward to the crystal are observed in our simulations under different growth velocities (0.3mm/min, 0.5mm/min and 0.65mm/min). The convections in melt were illustrated under different growth rates and intensities of magnetic field. The growth rate of 0.5mm/min and axial magnetic fields intensity of 0.3T were recommended as an appropriate control condition.

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Periodical:

Edited by:

Enhou Han, Guanghong Lu and Xiaolin Shu

Pages:

179-183

DOI:

10.4028/www.scientific.net/MSF.689.179

Citation:

W. T. Xu et al., "Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields", Materials Science Forum, Vol. 689, pp. 179-183, 2011

Online since:

June 2011

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$35.00

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