Effect of Thermal Annealing on Electrical Properties of Si-LiNbO3
The substructure and electrical properties of the films with the thickness up to 2.0 µm deposited on Si by the methods of the radio frequency magnetron and ion-beam sputtering of a LiNbO3 target have been investigated. It has been established that in thermally annealed samples an activated conduction mechanism with variable jump distance takes place. As a result of thermal annealing a decrease in the charge localization centers (CLC) in the LiNbO3 films from Nt=3·1018cm-3 to Nt=3·1016cm-3 occurs.
B. J. Ruck and T. Kemmitt
V. M. Ievlev et al., "Effect of Thermal Annealing on Electrical Properties of Si-LiNbO3", Materials Science Forum, Vol. 700, pp. 53-57, 2012