HeteroSiC & WASMPE 2011
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.
Review from Ringgold Inc., ProtoView: The 46 papers in this volume have been selected from the Fourth Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), which occurred in June 2011 in Tours, France. Contributors working in physics and materials science, microelectronics, nanotechnology, and other sciences in Europe, the US, and Japan discuss silicon carbide heteroepitaxy growth and other materials, polytypes, and bandgap engineering; gallium nitride and diamond power electronics; and advances in graphene technology, its introduction in devices, and its relationships to silicon carbide epitaxial material. Sections include papers on microsystems and microstructures based on silicon carbide, devices on silicon carbide, and device and material characterization.